Invited Speakers

Plenary Talks

Kimimori Hamada (Toyota Motor, Japan)
"Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide-Bandgap Semiconductor Devices"

Albert A. Burk (Cree, USA)
"SiC Epitaxial Growth on Multiple 100 mm Wafers and its Application to Power-Switching Devices"

Dethard Peters (SiCED, Germany)
"SiC Power Devices for Industrial Inverters"

Invited Talks

• SiC and GaN Bulk/Epitaxial Growth
  
  Hiroyuki Nagasawa (HOYA, Japan)
  "Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOS-FET Performance"
  
  Michael Dudley (Stony Brook Univ., USA)
  "Aspects of Dislocation Behavior in SiC"
  
  Xuan Zhang (Carnegie Mellon Univ., USA)
  "Nucleation of Extended Defects in 4H-SiC Epitaxial Layers"
  
  Fumio Kawamura (Osaka Univ., Japan)
  "LPE Growth of Bulk GaN crystal by alkali-metal flux method"
  
  Michel Pons (CNRS-INPG, France)
  "Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling"
  
  
• Characterization
  
  Peder Bergman (Linköping Univ., Norstel AB, Sweden)
  "Study of Bipolar Degradation in PiN-diodes Grown on on-axis 4H Substrates"
  
  Michel Bockstedte (Univ. Erlangen-Nürunberg, Germany)
  "Defects Identified in SiC and their Implications"
  
  Junichi Isoya (Univ. of Tsukuba, Japan)
  "EPR Identification of Defects and Impurities in SiC: How can be Decisive?"
  
  Thomas Seyller (Univ. Erlangen-Nürunberg, Germany)
  "Photoelectron spectroscopy studies of carbon-rich SiC surfaces"
  
  Tsunenobu Kimoto (Kyoto Univ., Japan)
  "Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Electron Irradiation"
  
  
• Device Processing and Device Physics
  
  Kenji Fukuda (AIST, Japan)
  "Challenges of 4H-SiC MOS Devices on the C-face toward the Achievement of Ultra Low On-resistance"
  
  T. Paul Chow (Rensselaer Polytechnic Inst., USA)
  "Recent Progress in GaN MOSFET Technology"
  
  Toshiharu Ohnuma (CRIEPI, Japan)
  "Dynamical Simulation of SiO₂/4H-SiC Interface on C-face Oxidation Process: From First Principles"
  
  
• Device Fabrication and Application
  
  Joshua D. Caldwell (Naval Research Lab., USA)
  "Temperature Dependence of Shockley Stacking Fault Propagation and Shrinking in 4H-SiC p-i-n Diodes"
  
  Linlin Liu (Velox Semicond. Corp., USA)
  "600V GaN Schottky Barrier Diodes for High Volume, Low Cost Applications"
  
  Anant Agarwal (Cree, USA)
  "Critical Technical Issues in High Voltage SiC Power Devices"
  
  Hervé Morel (Lab AMPERE, INSA-Lyon, France)
  "New Applications in Power Electronics Based on SiC Power Devices"
  
  Makoto Kitabatake (Matsushita Electric Industial Co., Ltd., Japan)
  "Normally-off 1400V/30A 4H-SiC DACFET and Its Application to DC-DC Converter"
  
  Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd., Japan)
  "Status of GaN-based Power Switching Devices"
  
  Nick Wright (Newcastle Univ., UK)
  "Applications-based Design of SiC Technology"
  
  

Invited Posters

Chariya Virojanadara (Max- Planck-Inst., Germany)
"Electronic and Atomic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces"

Hidekazu Tsuchida (CRIEPI, Japan)
"Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy"

Jawad Ul Hassan (Linköping Univ., Sweden)
"Origin of Carrot Defect in Epilayers"

Ryo Hattori (Mitsubishi Electric Corp., Japan)
"Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC"

Michael Grieb (Fraunhofer Inst. Integrated Systems and Device Technology, Germany)
"Influence of the Oxidation Atmosphere and Temperature on the Reliability of Thick Gate Oxides on the 4H-SiC (000-1) C-face"

Kathrin Rüschenschmidt (Infineon Technologies AG, Germany)
"SiC JFET: The Currently Best Solution for an Unipolar SiC High Power Switch"